Abstract
Thermal oxygen donor generation in SIMOX material formed in Czochralski (CZ) and oxygen free float zone (FZ) silicon was investigated by Hall and photoluminescence techniques. It was determined that residual interstitial oxygen was introduced to silicon by the SIMOX buried oxide formation process thus increasing the possibility of thermal donor creation. Significantly, thermal donor generation was identified and localized to the top silicon region in FZ material. The detected concentration of residual oxygen was on the order of 5 × 1013 cm-3 and is negligible when compared to the intrinsic oxygen concentration of the starting CZ bulk material.
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