Abstract
A comparison of the thermal donor formation processes and related phenomena in the hydrogen-implanted Czochralski-grown silicon wafers one of which was doped with nitrogen during the growth was made. An average thermal donor concentration in the crystals was found to be higher in the nitrogen-doped silicon, but the difference was not very large. Suppression of the impurity gettering on radiation damages, and more effective passivation of the free carriers by hydrogen in near-surface layer was found for nitrogen-doped silicon.
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