Abstract
We find that the 5 × 5 reconstruction can form only by indium deposition on the ‘rect’ structure of the Si(111)-7×3-In surface in a step-flow-like growth manner, which was previously known to form by deposition of the 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecules on the 7×3-rect surface. The 5 × 5 reconstruction is found to be an incommensurate structure that should be expressed as ∼5.4 × ∼5.4, instead of the 5 × 5. The ∼5.4 × ∼5.4 surface consists of a triple indium layer with about 3.1 ML coverage, and has a strong insulating character, in contrast to the metallic electronic states on the 7×3-rect surface. The ∼5.4 × ∼5.4 surface is considered to be rather unstable at RT.
Published Version
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