Abstract
The morphology, chemistry, and band bending at the Ca/GaAs(110) interface are studied with Auger electron spectroscopy, electron energy-loss spectroscopy, low-energy electron diffraction, x-ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy. Ca is found to grow nearly uniformly on GaAs at RT. There is a Ca–Ga exchange reaction at the interface. An intermediate position of the Fermi level (EF) resulting from the formation of adsorbate induced states and native defects is found at low coverage at 0.75–0.9 eV above the top of the valence-band maximum (VBM). An additional shift of EF leading to a final position 0.55 eV above VBM takes place when metallicity develops in the overlayer. The results for this interface support Schottky barrier models based on gap states induced or modified by the metal.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.