Abstract
Insulation films with a stacked structure were formed on metal surfaces via a combination of the sol-gel and sputtering processes. Thin films of Ta 2O 5 prepared by the sol-gel process were effective in planarization of rough metal surfaces. Sputtered SiO 2 films were deposited on the sol-gel Ta 2O 5 films thus formed, and the insulation properties were evaluated by resistance measurements. It was found that the insulation properties of stacked films of the sputtered SiO 2 and sol-gel Ta 2O 5 films were much better than those of only sputtered or sol-gel films. It can be concluded from this result that sol-gel films were effective in planarization of concave regions, and that sputtered films were mainly formed on convex or summit areas of rough metal surfaces.
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