Abstract
An organic source gas, tris-dimethyl-amino-silyl-azide (TDSA, [(CH3)2N]3SiN3), was newly synthesized and utilized for the deposition of a passivation film of sub-half-micrometer devices. Deposition temperature dependence of the film formed by plasma-enhanced chemical vapor deposition (PECVD) using TDSA was investigated and step coverage of the TDSA film was examined. As a result, it was clarified that hydrocarbon content in the film decreased with increasing deposition temperature. The bottom step coverage of the films formed using TDSA was greatly improved compared to that of the conventional silicon nitride film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
