Abstract
Nano-composites of silver particles embedded in silicon matrix were fabricated by 50-kV ion implantation using a high-beam-current metal vapor vacuum arc ion source. A dynamic model accounting for the implantation and associated sputtering process reaching a steady state was introduced to analyze the depth profile of the Ag in Si. Upon annealing at an elevated temperature, the Ag nanoparticles were found to recrystallize and grow larger in size, although they were mostly amorphous when first implanted. Heating to 400°C resulted in out-diffusion Ag atoms and formation of Ag nanoparticles at the Si surface. A primitive pn-diode was fabricated by solid phase epitaxy that converts the amorphized n-type Si into crystalline p-type Si aluminum.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
