Abstract
Separation by plasma implantation of oxygen (SPIMOX) was developed to fabricate silicon-on-insulator (SOI) wafers based on separation by implantation of oxygen technology, however, it suffers from the coexistence of O+ and O2+ ions in the oxygen plasma, which gives rise to nonuniformity of the formed buried oxide layer. In the present work, water plasma was used as a source of oxygen (H2O+, HO+, and O+) for achieving small spread in the oxygen implant depth profile. The feasibility of SPIMOX with water plasma to form SOI wafers was explored at an ion implanter without mass separator. Cross-sectional transmission electron microscopy revealed that a uniform buried oxide layer was formed under a single crystal silicon overlayer with the present process. The interfaces between the silicon overlayer, buried oxide layer, and bulk silicon were smooth and sharp. An implant dose window has been identified for producing a desirable SOI structure.
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