Formation of SiC SOI Structures by Direct Growth on Insulating Layers

Abstract

SiC semiconductor‐on‐insulator (SOI) structures have been fabricated by the direct deposition of crystalline SiC films on , , and substrates. The Si substrates were all 〈100〉 oriented. The SiC deposition utilized single organosilane precursors (silacyclobutane and trimethylsilane) at temperatures of ∼ 1200°C, producing growth rates of ∼ 1 μm/min. X‐ray diffraction (XRD) shows that all SiC films are 〈111〉 oriented with a 2θ peak at 35.6° with linewidths between 0.21 and 0.24°. The XRD SiC(111) peak has a maximum for SOI structures with thickness values of 30–70 nm. Fourier transform infrared (FTIR) spectroscopy performed in the transmission mode revealed only the Si‐C bond stretching vibration at . In reflection mode FTIR, the Si‐C bond vibration peak frequency shifts to . The SiC‐insulator interfaces of and structures are very smooth and free of voids. Initial fabrication of static microelectromechanical systems devices has shown that chemical vapor deposition conformal growth of SiC on structured sacrificial layers is successful. © 2000 The Electrochemical Society. All rights reserved.