Formation of Si-C films using negative ion beam sputtering

Abstract

A thin film deposition method has been established using an ion beam sputtering by negative ions. The most important characteristics of this method is a high purity film synthesis by self-sputtering under the ultra-high vacuum condition. That is, deposited films contain no gas elements, for example, Ar or Kr, used in general sputtering methods. The use of Cs sputter type negative ion source makes this possible. In this report we demonstrate the formation of Si-C system by this method. The dependence of the composition of deposited films of the target materials: Si, C and SiC, and the beam species of Si/sup -/ and C/sup $/are reported.