Abstract
A sputter type negative ion source was developed for a simultaneous Positive And Negative‐ion‐beam Deposition Apparatus (PANDA). Appropriate beam currents of low energy negative carbon and silicon ions for deposition have been obtained. Since mass spectra of the generated negative ions show only a small number of ion species and there is low flow of discharging Ar gas from the ion source to the deposition chamber, it is possible to fabricate films under very good vacuum conditions. A carbon nitride film was deposited by using 200 eV C−2 and 100 eV N+2 ions on a silicon wafer and analyzed by Rutherford backscattering and other technique. The present status of PANDA is described and advantages of usage of negative ions for materials research are discussed.
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