Abstract
We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850 °C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850 °C with the assistance of a tungsten hot-filament at ∼1800 °C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH3SiH3 jet irradiation.
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