Formation of shallow source/drain extensions for metal–oxide–semiconductor field-effect-transistors by antimony implantation

Abstract

Shallow Sb and As junctions have been investigated with regard to their applicability in complementary metal–oxide–semiconductor (CMOS) technologies. Replacing As source/drain extensions by Sb with the same implanted depth facilitates the formation of about 20 nm shallower junctions and even lower sheet resistance. This is due to the absence of transient enhanced diffusion effects and less dose loss for Sb. Sb source/drain extensions with a final junction depth of 40 nm and a sheet resistance of 320 Ω/sq have been integrated in a standard CMOS process with 130 nm gate length. The same low leakage current level is demonstrated for Sb and As extensions.