Abstract

This paper describes the design and fabrication of a new silicon integrated gas sensor. The sensor is designed so that the front-end of the fabrication is compatible to the standard CMOS (Complementary Metal-Oxide-Semiconductor) process. The sensor specific fabrication is carried out as post-processing steps after the standard CMOS processing. The new device is an improved version of the previously reported device. The CMOS compatibility will facilitate the integration of support circuitry and the realization of the integrated gas sensor array for the detection and analysis of a gas mixture. The CMOS compatibility will also reduce the cost and increase the reliability of the integrated sensor.

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