Abstract
Boron doping of silicon is achieved by employing a diode parallel-plate-type dc plasma reactor, where diborane (B2H6) gas diluted with Ar (0.5 mol %) is used as doping gas. Total boron concentration changes from 1.17×1015 to 1.82×1015 atoms with varying applied dc bias voltage, Vdc, from 1600 to 3000 V. Shallow and low sheet resistance highly doped p(p+) layer is formed with annealing of the layer doped above total doping concentration of 1.20×1015 atoms. Peak carrier concentration of 2.20×1020/cm3 and a sheet resistance of 86 Ω/⧠ are attained in 140 nm depth p+ layer.
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