Abstract
Fourier transform infrared (FTIR) transmission and Hall effect measurements were performed to investigate the optical and electrical properties of as-grown and in situ-annealed Hg1-xCdxTe epilayers grown on CdTe buffer layers by molecular beam epitaxy. After annealing the Hg1-xCdxTe epliayers in a Hg cell flux atmosphere, the FTIR spectra showed that their transmission intensity increased in comparison to that of the as-grown Hg1-xCdxTe epilayer. Hall effect measurements showed that the carrier concentration decreased and the mobility increased after annealing. These results indicate that Hg atoms not only effectively passivate the Hg vacancies in the Hg1-xCdxTe epilayers but can also convert the as grown n-epilayers to p-Hg1-xCdxTe epilayers due to in situ thermal annealing.
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