Abstract
We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. We confirmed that the temperatures of tungsten films increased to above 1000?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of tungsten films deposited on amorphous silicon films on glass substrates and formed polycrystalline silicon films. To utilize this method, we can perform the crystalline process only on device regions. TFTs were fabricated on the polycrystalline silicon films and the electron mobilities of 60 cm2/Vs were obtained.
Highlights
Polycrystalline silicon thin film transistors (TFT’s) are used for driving elements of flat panel displays (FPDs) such as liquid crystal display, organic light emitting diode display [1] [2]
We have developed an apparatus for producing high-density hydrogen plasma
We applied this phenomenon to the selective heat treatment of tungsten films deposited on amorphous silicon films on glass substrates and formed polycrystalline silicon films
Summary
Polycrystalline silicon (poly-Si) thin film transistors (TFT’s) are used for driving elements of flat panel displays (FPDs) such as liquid crystal display, organic light emitting diode display [1] [2]. Poly-Si films on a glass substrate obtained by solid phase crystallization (SPC) has been investigated [3] [4]. The SPC method requires heating treatment for a very long time in order to improve crystallinity. The process temperature reaches approximately 800 ̊C. We must consider that heat treatment causes the degradation of TFTs reliability
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