Abstract
Polycrystalline CdSe films were formed by molecular-beam deposition (MBD) on glass substrates under an ultra-high vacuum, and the structural and electrical characteristics of the films were investigated. The surfaces of the films became less smooth as the substrate temperature increased. The crystal structure was of the würtzite type with a preferential orientation of the (0001) planes parallel to the substrate. TEM investigation showed that the average grain size increases from a few hundred Å to a few micrometers as the substrate temperature is raised from R. T. to 300°C. These values are about ten times as large as any previously reported. This good crystallinity of CdSe films formed by MBD is attributed to the slow growth under ultra-high vacuum conditions. The resistivity had a maximum value of about 1×105 Ω·cm at a substrate temperature of 200°C.
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