Abstract
In this study, a pn homojunction was intentionally fabricated in the Cu(InGa)Se2 (CIGS) layer by Zn doping. For Zn doping of the CIGS layer, Zn was evaporated after CIGS formation, and a potential improvement in cell performance was confirmed by this technique. Furthermore, Zn diffusion into the CIGS film was investigated by secondary ion mass spectroscopy (SIMS). A conductivity-type conversion from p-type to n-type was studied by the measurement of the cross-sectional electron beam-induced current (junction EBIC: JEBIC) and the spectral response of solar cells. A conversion efficiency of 11.5% has been achieved using the Zn-doped CIGS layer without a buffer layer and by the formation of a pn homojunction in the CIGS absorber.
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