FORMATION OF PLATINUM SILICIDE LAYERS DURING THE RAPID THERMAL PROCESSING OF THE SYSTEM PLATINUM-SILICON: STRUCTURAL-PHASE CHANGES

Abstract

The paper presents the performed investigations of the structural-phase changes of the platinum-silicon system during rapid thermal processing (RTP) in the nitrogen medium within the temperature range from 200°C to 550°C with a step of 50 K and the time duration of 7 s. High effectiveness of the RTP process was demonstrated for formation of the thermally stable platinum silicides in the nanodimensional film (40 nm Pt)/(Si 111) substrate system. Within the temperature range of 200°C ≤ T ≤ 300°C during 7 s of the RTP process on the border of the → metallic film with the substrate there grows the Pt2Si layer at the expense of the Pt atoms diffusion into silicon through the layer of the growing silicide. It is peculiar for the temperature T = 300°C to use completely the film of Pt for 7 s in the process of the silicide formation of the single-phase system of Pt2Si. At 350°C ≤ T < 450°C formation is registered of the double-phase system of Pt2Si PtSi, starting from the interphase boundary of Si/Pt2Si predominantly at the expense of the oncoming diffusion of Si atoms into the layer of Pt2Si. The RTP temperature T = 450°C marks formation of the thermally stable structure of PtSi along the entire thickness of silicide, which is 50-100°C lower and substantially faster, than during the continuous furnace thermal treatment (FTT).