Abstract
Current density–voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) layers were measured with various thicknesses of a molybdenum trioxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO3 layer forms Ohmic hole injection at the ITO∕MoO3∕α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to an electron transfer from ITO and α-NPD to MoO3.
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