Abstract

Ohmic contacts for holes were formed on naphthalene tetracarboxylic anhydride films (NTCDA) at Pd-doped p-type film/metal junction. The injection current density reached 10 Acm−2 at a low bias field of 1.25 × 104 Vcm−1. Pd was revealed to be a candidate for a permanent dopant that can act as an electron acceptor in the formation of p-type organic semiconductors.

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