Abstract
Ohmic contacts for both holes and electrons were formed on naphthalene tetracarboxylic anhydride films at platinum-doped p-type film/metal and sodium-doped n-type film/metal junctions, respectively. The injection current density reached 4Acm−2 at a low bias field of 6×104Vcm−1. Platinum was revealed to be a candidate for a permanent dopant that can act as an electron acceptor in the formation of p-type organic semiconductors.
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