Formation of MoSi2 by pulsed electron beam irradiation onto a vapor deposited molybdenum/silicon structure

Abstract

A molybdenum disilicide layer was formed by pulsed electron beam irradiation onto a vapor deposited Mo film on a Si substrate. The electron beam with a duration of almost 1 μs was generated by glow discharge of He at a pressure of 1×10−5 Torr in a vacuum chamber equipped with a capacitor of 1 μF that was charged at 7 kV. The total energy stored in the capacitor was 25 J and the irradiated area was almost 1 in. in diameter. The qualitative and structural characterizations were performed by Auger electron spectroscopy (AES), transmission electron diffraction (TED), and transmission electron microscopy (TEM). A depth profile by AES showed that a uniform MoSi2 layer was formed toward the Mo surface from the Mo/Si interface and that C and O contaminants were swept away from the silicide. The hexagonal MoSi2 phase was uniquely identified in the irradiated layer and the TEM micrographs showed uniform polycrystalline grains of a size of 800 Å.