Abstract
The dry resist-free process of electron beam-induced masking via chemical vapor deposition from a hydrocarbon precursor was studied. It was shown that the obtained mask exhibited a low selectivity during ion beam etching with SF 6 ions. It was found that, during mask deposition, a thin (of the order of 1 nm) bound- ary layer is formed on the SiO 2 plate surface; the layer had a substantially higher plasma resistance and, hence, high selectivity upon ion beam etching of SiO 2 . Certain features of the masking process and the properties of the mask material were studied.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
