Features of resist-free formation of masking pattern by electron beam-induced vapor deposition

Abstract

Certain features of masking-pattern formation via electron beam-induced deposition from undecane vapor onto a copper substrate were considered. It was shown that the width of pattern bands formed on copper is substantially greater than that on SiO2 and is almost independent of their height (mask layer thickness). A strong dependence of the mask growth rate on the beam scan time was revealed, indicating the diffusion regime of the mask formation process. Through the mask, the substrate was etched with Ar ions. It was shown that the mask material is etched at a 1.3 times lower rate than copper.