Formation of masking pattern by electron beam-induced vapor deposition

Abstract

The dry resist-free process of electron beam-induced masking via chemical vapor deposition from a hydrocarbon precursor was studied. It was shown that the obtained mask exhibited a low selectivity during ion beam etching with SF 6 ions. It was found that, during mask deposition, a thin (of the order of 1 nm) bound- ary layer is formed on the SiO 2 plate surface; the layer had a substantially higher plasma resistance and, hence, high selectivity upon ion beam etching of SiO 2 . Certain features of the masking process and the properties of the mask material were studied.