Abstract
The in-plane strain relaxation properties on InGaAs/GaAs (3 1 1) B were investigated by means of reciprocal space mapping using triple axis X-ray diffractometry to study the origin of two-dimensional ordering of InGaAs quantum dots (QDs) on a GaAs (3 1 1) B substrate. From the X-ray data, the strain relaxation anisotropy in the InGaAs layer was observed to be larger on the GaAs (3 1 1) B substrate than on (0 0 1) . It is proposed that the large strain anisotropy is responsible for the QD ordering observed on the (3 1 1) B surface.
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