Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing

Abstract

The integration of high-mobility III–V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a non-conventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employed to fabricate InxGa1−xAs nanocrystals and to study their crystallization process in thin Si layers. The implantation fluence ratio of Ga and In ions has been varied to tailor the final nanocrystal composition. Raman spectroscopy and x-ray diffraction analyses verify the formation of ternary III–V nanocrystals within the Si layer. Transmission electron microscopy reveals single-crystalline precipitates with a low number of defects. A liquid epitaxy mechanism is used to describe the formation process of III–V nanocrystals after melting of the implanted thin Si layer by flash lamp annealing. The fabricated InxGa1−xAs nanocrystals are mainly Ga-rich with respect to the implanted Ga/In ratio.