Abstract
InGaAs quantum wires (QWRs) are naturally formed on GaAs vicinal (110) substrates by molecular beam epitaxy (MBE). These QWRs are induced by thickness modulation at coherently aligned giant step edges. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (TEM) observations show the uniformity of giant steps and thickness modulation at giant step edges on GaAs vicinal (110) substrates. Photoluminescence (PL) measurements reveal that the PL spectra of InGaAs QWRs sample show lower energy shift as compared to those of InGaAs quantum well (QWL) on GaAs (100) substrates grown at the same time. This is consistent with the thickness modulation at the giant step edges. The PL observation evidences the carrier confinement in the QWRs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
