Abstract
The formation of InAs quantum dots grown by submonolayer migration-enhanced molecular-beam epitaxy on GaAs(100) surfaces with various misorientation angles and directions is investigated. It is shown for the deposition of 2 monolayers (ML) of InAs that increasing the misorientation angle above 3° along the [010], \([0\overline {11} ]\), and [011] directions leads to the formation of several groups of quantum dots differing in geometric dimensions and electronic structure.
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