Abstract
We have investigated flash-lamp annealing (FLA) of germanium wafers doped with phosphorous and boron introduced in the crystal by ion implantation. Annealing was performed by using pre-heating at 400–450°C in a conventional rapid thermal processing (RTP) unit and a fast (3–20ms) FLA annealing at 800°C or 900°C. Diffusion of P is suppressed during the 800°C–20ms FLA annealing, while concentration-enhanced diffusion occurs upon 900°C FLA anneals. Importantly, in both cases P activation seems to be enhanced by the FLA process. However, junction stability following the FLA process and possible deactivation are a concern.In contrast, the FLA process applied to B-doped pre-amorphized Ge layers does not show advantages as compared to a RTP conventional annealing combined with a solid phase epitaxial regrowth, in terms of B activation level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
