Formation of ferroelectric regular domain structures using shear elastic waves

Abstract

By simulating the effect of interfering shear waves on a ferroelectric through a layer of a liquid electrode, it was shown that it is possible to form not only micro-, but also submicron domain structures at frequencies below 1000 MHz at room temperature. The frequency dependences of the domain structure period and the angles of incidence of shear waves are obtained for frequencies limited by the framework of the Newtonian fluid model. The method has a short technological cycle, provides the necessary depth of domain inversion, and does not depend on the degree of acoustic transparency.