Formation of epitaxial Si/CoSi 2/Si(100) heterostructures using allotaxy

Abstract

Molecular beam allotaxy is capable of growing buried single crystalline CoSi 2 layers in Si(100). Buried layers are formed by growing first a precipitate layer embedded in epitaxial Si by molecular beam epitaxy and by subsequent high temperature annealing. Silicide layers with thicknesses between 27 and 220 nm have been fabricated. These layers have low channeling minimum yields of ∼5%, abrupt interfaces and low electrical resistivities of typically 14 μΩ·cm at room temperature. The elastic strain, measured by high-resolution X-ray diffraction, increases with decreasing layer thickness.