Abstract
Co x Ti 1−x layers were deposited on Si (100) and on Si/Si80Ge20 (100) capped with 30- or 40-nm-thick Si at 650 °C substrate temperature at 1×10−6 Pa pressure. The Co–silicide films grown by reactive deposition epitaxy were characterized by Rutherford backscattering-channeling, x-ray difraction, by depth profile analysis of the components, and by sheet resistance measurements. The Ti content of the deposited Co layers was between 0.1 and 8 at. %. The epitaxy of the layers on Si and on Si/Si80Ge20 improved by increasing the Ti concentration. The minimum yield of the channeling and the full width at half maximum value of the rocking curve of CoSi2 decreased. The sheet resisitance of the formed layers was also minimal in these cases. The method applied is promising to form epitaxial CoSi2 layers on SixGe1−x substrates.
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