Abstract
We demonstrate an effective method for formation of domain-inverted gratings in MgO:LiNbO3 for quasi-phase-matched nonlinear-optic devices. It was found that domain-inverted gratings could be obtained by application of voltage pulses with SiO2 insulation layer cladding. An insulation layer on the -Z face reduces the leakage current, and another insulation layer over a periodic electrode on the +Z face reduces excessive expansion of domain-inverted regions. Good-quality domain-inverted gratings with a period of 18 µm were obtained.
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