Abstract
The metal (Al)/insulator ( SiO2 and/or MgO)/metal (Au) stacking structure with thin (5–20 nm) insulating layers has been fabricated. The electrically insulating state of this as-formed structure abruptly changes to the conductive state upon application of pulsed dc voltage over a certain threshold voltage (V t), which is measured as a function of the thickness of insulator layers. The topographies of anodic Au surfaces before and after application of the voltage have been observed using the scanning tunneling microscope (STM). It is confirmed that, by applying voltage, the anodic Au surface deforms to form metallic paths penetrating into the insulator layer.
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