Abstract
InxGa1—xAs/GaAs heterostructures of various thicknesses of InxGa1—xAs layer and various indium contents were grown by means of molecular beam epitaxy on a (100)-oriented GaAs semi-insulating substrate in a Riber 32P set-up. Structural perfection of the heterostructures were determined using transmission electron microscopy and X-ray diffractometry. The purpose of this paper is to understand how the geometry of heterostructure and the indium content in the InxGa1—xAs layer influences the lattice perfection of the heterostructure. From the wide range of thicknesses and contents only those having practical application in devices were selected. The formation of dislocations in InxGa1—xAs/GaAs heterostructures with thin InxGa1—xAs layers, InxGa1—xAs multilayers grown on GaAs substrates and in index-graded InxGa1—xAs (x = 0.01 to 0.53) layers was studied. Conditions of the formation of defects were discussed. A mechanism of dislocation formation in index-graded InxGa1—xAs layers was proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
