Abstract
The results of an experimental study of the spectral dependence of the adsorption coefficient, reflection exciton spectra, luminescence, photoconductivity (in the wavelength range from 0.45 to 1 μm), and dark conductivity of pure and copper-doped CdS single-crystals, irradiated by E=46 MeV protons, are presented. It is shown that irradiation produces characteristic defects both in the cadmium sublattice and in the sulfur sublattice, but for one and the same irradiation dosages the defect concentration in CdS:Cu is many times higher than the concentration of defects in the pure crystals. A significant difference is observed in the concentrations of defects in these samples only when they are irradiated by high-energy particles which strongly ionize the lattice of the crystals. It is proposed that there exists an ionization mechanism for the transfer of a significant part of the energy of the moving protons to Cu atoms, which form a large number of defects (more than 1 per copper atom).
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