Abstract
Manifestation of antisite defects in crystals under irradiation is studied. Calculations show that the concentration of such defects can reach high levels under typical irradiation intensities and temperatures. It is shown that buildup of antisite defects and interaction between them can result in instability of the system during irradiation with respect to spatially nonuniform perturbations. The instability should give rise to a periodic modulation of the density of antisite defects. The region of instability as a function of crystal parameters and irradiation has been obtained.
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