Abstract
A depth-resolved experimental analysis (a spread- ing resistance probe and capacitance-voltage measurements) of a hydrogen plasma-enhanced thermal donor (TD) forma- tion at 400C in p-type Czochralski (Cz) silicon is presented. In this material for the first time, a fast TD introduction with high initial generation rates and the formation of deep p-n junctions was found. Both the depth of the p-n junc- tions in Cz silicon and the electron concentration originat- ing from TDs are dependent on the dose of hydrogen ions induced from the plasma. A kinetic model for hydrogen- enhanced TD formation is presented, the results from which agree rather well with the experimental data. Our study gives a method for a simple low-temperature p-n junction for- mation by a one-step hydrogen plasma treatment, which is promising as an inexpensive technology for p-n junction for- mation in Cz silicon. PACS: 71.00; 71.55
Published Version
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