Abstract
In the present work, CZTSe (Cu 2 ZnSnSe 4 ) films were deposited by Thermal evaporation technique. The as deposited films were annealed at 450 °C for 10 min. To incorporate Sulfur in the CZTSe film and to replace some of the Se by S, the films (as deposited and annealed) were treated with Thiourea solution (1 Molar). Further the films were annealed at 450 °C for 10 min after the thiourea treatment. Finally the films were characterized for phase analysis using XRD and Raman. The composition analysis was done using EDXRF. The band gap of the film varies according to the S/Se ratio. Compositional analysis as obtained from ED-XRF, shows the required ratio of Cu/(Zn + Sn) < 1 and Zn/Sn > 1 for all the films. The conductivity and mobility of the films changes with variation in sulfur and selenium ratio. The obtained electrical and optical properties of CZTSe absorber layer after thiourea treatment are suitable for device application .
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