Abstract
In the present work, in order to study the effect of Germanium (Ge) thin layer incorporation on the CZTSe films, the Ge thin layer was deposited on the backside of the CZTSe as well as in between the CZTSe. The films were prepared with the help of thermal evaporation technique in stack format using all the constituents. Subsequently, the films were subjected to selenization process in order to obtain the Germanium doped CZTSe films. The properties such as structural, morphological, optical and electrical of the undoped CZTSe and Ge doped CZTSe absorber layer with change in Ge thin layer incorporation position was investigated. The major peak of the CZTSe film is shifted towards right due to change in position of Ge thin layer in CZTSe. It was noticed that the position of Ge thin layer affects the properties of CZTSe film.
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