Formation of coupled quantum dots in single-wall carbon nanotubes

Abstract

The triple-barrier coupled quantum dots have been fabricated in individual single-wall carbon nanotubes by depositing a narrow SiO2 layer in between metallic source–drain contacts. The current–voltage characteristics at 4.2 K with different gate voltages before the SiO2 deposition have indicated the formation of a single quantum dot. After the SiO2 deposition, the irregular Coulomb diamonds and the negative differential conductance have been observed, which suggests the formation of coupled quantum dots.