Abstract
The CeO 2 buffer layer was fabricated using the multi-plume pulsed laser deposition (PLD) method with different deposition rates controlled by the excimer laser energy and frequency on the Gd 2Zr 2O 7 template tape formed by the ion-beam assisted deposition (IBAD) with 14° of Δ φ (full width at half maximum (FWHM) value of X-ray diffraction φ-scan for Gd 2Zr 2O 7 (2 2 2) pole). The laser conditions with high pulse energy and low frequency resulted in a highly textured in-plane grain alignment (Δ φ). The surface roughness and Δ φ values were improved by increasing the thickness of the CeO 2 buffer layer. YBCO films with the thickness of 1 μm and 1.6 μm were further deposited by the advanced trifluoroacetates–metal organic deposition (TFA–MOD) on the CeO 2 buffered substrates with the deposition rate of 0.15 and 0.5 μm/min. The J c values of 2.5 MA/cm 2 and 2 MA/cm 2 were obtained, respectively. High J c films could be deposited on the CeO 2 buffer layer even at high deposition rate by the multi-plume deposition.
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