Abstract
Nitrogen ion implantation is a useful technique to put nitrogen ions into lattices. In this work, nitrogen ion implantation into epitaxial Mo films is performed to create a buried superconducting γ-Mo2N. Atomically flat epitaxial (110) Mo films are grown on (0001) Al2O3. By impinging nitrogen ions, where the beam energy is fixed to 20 keV, we observe (111) γ-Mo2N diffraction and the formation of a γ-Mo2N layer from X-ray reflectivity. Magnetization and transport measurements clearly support a superconducting layer in the implanted film. Our strategy shows that formation of a buried superconducting layer can be achieved through ion implantation and self-annealing.
Highlights
Ion implantation is a versatile technique to incorporate ions into crystalline lattices.[1,2] Through ion implantation, electrical, magnetic, and optical properties have been tuned
The obtained electron scattering length density of a Mo layer is 7.54 AÀ2, which is very similar to the bulk value of Mo
In order to re ect the results of transport of ions in matter (TRIM) simulation and STEM/energy dispersive X-ray spectroscopy (EDS) results, we modeled the system with three layers: (i) defective-surface Mo layer possibly due to recoiled Mo atoms, (ii) nitrogen-implanted Mo layer, and (iii) unperturbed Mo layer
Summary
Ion implantation is a versatile technique to incorporate ions into crystalline lattices.[1,2] Through ion implantation, electrical, magnetic, and optical properties have been tuned. It is generally known that higher ion incorporation could be possible, when lower energy and higher dose used.[20] In this work, we observed evidence of buried superconducting-phase formation by ion implantation on (110) epitaxial Mo thin lms using relatively low energy. Z-contrast imaging and energy dispersive X-ray spectroscopy (EDS) are performed on the highest nitrogen dosed sample (5 Â 1016 ions cmÀ2 of N+).
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