Abstract
Silicon wafers have been implanted with 200 keV oxygen to dosss of up to 2.4 × 10 18 O +/cm 2 at implantation temperatures of 325°C to 600°C. Rutherford backscattering and SIMS show the oxygen depth distribution is insensitive to the implantation temperature but is modified by subsequent high-temperature processing. Multiple laser irradiations produced a single crystal layer at the surface by LPE regrowth but better crystallinity is observed in samples which have been furnace annealed, when a layer of 1000 Å thickness is formed which is denuded of oxygen. Preferred conditions to form a silicon on insulator structure (SOI) suitable for VLSI device technology are implantation temperature 400–500°C followed by furnace annealing at 1150°C for 2–4 h with an SiO 2 cap.
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