Abstract
A study of the fundamental aspects of the influence exerted on the electronic properties of a surface of Si (100) single crystals with a natural oxide coating by low-energy microwave plasma treatment in various plasma-forming media is reported. Model mechanisms of the process and factors providing stable modification of the electronic properties of the surface of silicon crystals via the formation of built-in surface potentials determined by the chemical activity of working gases used in plasma microtreatment under weak-adsorption conditions are considered. It is shown that, in principle, the electronic properties of the surface of semiconductor crystals can be actively formed to extend their electrical and functional properties.
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