Modification of electronic properties of the surface of (100) silicon crystals under microwave plasma micromachining

Abstract

The behavior of the effect of microwave plasma micromachining on electronic properties of (100) silicon crystal surfaces at weak adsorption was investigated. Model process mechanisms and factors providing stable modification of the electronic properties of the silicon surface by the formation of built-in surface potentials determined by chemical reactivity of the used working gases and modes of microwave plasma treatment were considered. The possibility in principle of the active formation of electronic properties of the surface of semiconductor crystals to extend their electrophysical and functional properties was shown.