Formation of AsxSb1−x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

Abstract

Metalorganic chemical vapor deposition growth of InAs/GaSb superlattices is reported using an AsxSb1−x plane that connects the InAs and GaSb layers to compensate the tensile strain introduced by the InAs layers. The effects of gas switching sequences for growing the AsxSb1−x planes on the interface structure and crystalline quality of InAs/GaSb superlattices were investigated by Raman scattering spectroscopy and X-ray diffraction. It is found that uniform interfaces and high-quality superlattice can be obtained by growing the AsxSb1−x planes through the exchange interaction of As and Sb atoms at the surfaces of InAs or GaSb layers.